Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
6 V
Package Type
SOT-143
Mounting Type
Surface Mount
Pin Count
4
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
900 mV
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
600 mV
Maximum Collector Cut-off Current
5µA
Height
0.9mm
Width
1.3mm
Maximum Power Dissipation
300 mW
Dimensions
2.9 x 1.3 x 0.9mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Tuotetiedot
Darlington Transistors, Infineon
Bipolar Transistors, Infineon
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,04
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,05
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,04
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,05
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonTransistor Type
NPN
Maximum Continuous Collector Current
100 mA
Maximum Collector Emitter Voltage
30 V
Maximum Emitter Base Voltage
6 V
Package Type
SOT-143
Mounting Type
Surface Mount
Pin Count
4
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
900 mV
Maximum Collector Base Voltage
30 V
Maximum Collector Emitter Saturation Voltage
600 mV
Maximum Collector Cut-off Current
5µA
Height
0.9mm
Width
1.3mm
Maximum Power Dissipation
300 mW
Dimensions
2.9 x 1.3 x 0.9mm
Maximum Operating Temperature
+150 °C
Length
2.9mm
Tuotetiedot