Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK-7
Series
OptiMOS™ 5
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.45mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.2V
Tuotetiedot
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 7,70
kpl (toimitus kelassa) (ilman ALV)
€ 9,664
kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
2
€ 7,70
kpl (toimitus kelassa) (ilman ALV)
€ 9,664
kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
2
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
2 - 18 | € 7,70 | € 15,40 |
20 - 98 | € 6,50 | € 13,00 |
100 - 198 | € 5,70 | € 11,40 |
200 - 498 | € 5,40 | € 10,80 |
500+ | € 4,80 | € 9,60 |
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Package Type
D2PAK-7
Series
OptiMOS™ 5
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Length
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Height
9.45mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.2V
Tuotetiedot
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.