Tekninen dokumentti
Tekniset tiedot
Merkki
IXYSChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Series
HiperFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
390 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
10.41mm
Typical Gate Charge @ Vgs
83 @ 10 V nC
Width
11.05mm
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
4.83mm
Minimum Operating Temperature
-55 °C
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 10,20
kpl (ilman ALV)
€ 12,65
kpl (Sis ALV:n)
1
€ 10,20
kpl (ilman ALV)
€ 12,65
kpl (Sis ALV:n)
1
Osta irtotavarana
Määrä | Yksikköhinta |
---|---|
1 - 4 | € 10,20 |
5 - 9 | € 8,70 |
10 - 24 | € 8,30 |
25+ | € 7,90 |
Tekninen dokumentti
Tekniset tiedot
Merkki
IXYSChannel Type
N
Maximum Continuous Drain Current
80 A
Maximum Drain Source Voltage
250 V
Package Type
D2PAK (TO-263)
Series
HiperFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
16 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
390 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
10.41mm
Typical Gate Charge @ Vgs
83 @ 10 V nC
Width
11.05mm
Number of Elements per Chip
1
Forward Diode Voltage
1.4V
Height
4.83mm
Minimum Operating Temperature
-55 °C