Tekninen dokumentti
Tekniset tiedot
Merkki
MagnaChipChannel Type
N
Maximum Continuous Drain Current
94 A
Maximum Drain Source Voltage
30 V
Package Type
PowerDFN56
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
28.8 nC @ 10 V
Width
5.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.1mm
Alkuperämaa
China
Tuotetiedot
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.
MOSFET Transistors, MagnaChip
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,426
1 kpl (25 kpl/kela) (ilman ALV)
€ 0,535
1 kpl (25 kpl/kela) (Sis ALV:n)
Standardi
25
€ 0,426
1 kpl (25 kpl/kela) (ilman ALV)
€ 0,535
1 kpl (25 kpl/kela) (Sis ALV:n)
Standardi
25
Tekninen dokumentti
Tekniset tiedot
Merkki
MagnaChipChannel Type
N
Maximum Continuous Drain Current
94 A
Maximum Drain Source Voltage
30 V
Package Type
PowerDFN56
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
6.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
65.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
28.8 nC @ 10 V
Width
5.1mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.1V
Height
1.1mm
Alkuperämaa
China
Tuotetiedot
Low Voltage (LV) MOSFET
These low voltage (LV) MOSFET provide low on-state resistance and fast switching performance.