Tekninen dokumentti
Tekniset tiedot
Merkki
MicrochipChannel Type
N
Maximum Continuous Drain Current
175 mA
Maximum Drain Source Voltage
300 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Tuotetiedot
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
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Tarkista myöhemmin uudelleen.
€ 0,821
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 1,018
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
€ 0,821
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 1,018
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
10
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 20 | € 0,821 | € 8,21 |
30 - 90 | € 0,78 | € 7,80 |
100+ | € 0,721 | € 7,21 |
Tekninen dokumentti
Tekniset tiedot
Merkki
MicrochipChannel Type
N
Maximum Continuous Drain Current
175 mA
Maximum Drain Source Voltage
300 V
Package Type
TO-92
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
12 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3.5V
Maximum Power Dissipation
740 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.2mm
Width
4.19mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
5.33mm
Tuotetiedot
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.