Tekninen dokumentti
Tekniset tiedot
Merkki
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Package Type
TO-243AA
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.6mm
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.
MOSFET Transistors, Microchip
€ 17,22
€ 0,861 1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 21,61
€ 1,081 1 kpl (20 kpl/pakkaus) (Sis ALV:n)
Standardi
20
€ 17,22
€ 0,861 1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 21,61
€ 1,081 1 kpl (20 kpl/pakkaus) (Sis ALV:n)
Standardi
20
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
20 - 20 | € 0,861 | € 17,22 |
40 - 80 | € 0,819 | € 16,38 |
100+ | € 0,755 | € 15,10 |
Tekninen dokumentti
Tekniset tiedot
Merkki
MicrochipChannel Type
N
Maximum Continuous Drain Current
30 mA
Maximum Drain Source Voltage
500 V
Package Type
TO-243AA
Mounting Type
Surface Mount
Pin Count
4
Maximum Drain Source Resistance
1 kΩ
Channel Mode
Depletion
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
2.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.6mm
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
Supertex N-Channel Depletion Mode MOSFET Transistors
The Supertex range of N-channel depletion-mode DMOS FET transistors from Microchip are suited to applications requiring high breakdown voltage, high input impedance, low input capacitance and fast switching speeds.