Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
24 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
5.1mm
Number of Elements per Chip
2
Height
1.05mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Malaysia
Tuotetiedot
Dual N-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,191
1 kpl (1500 kpl/kela) (ilman ALV)
€ 0,237
1 kpl (1500 kpl/kela) (Sis ALV:n)
1500
€ 0,191
1 kpl (1500 kpl/kela) (ilman ALV)
€ 0,237
1 kpl (1500 kpl/kela) (Sis ALV:n)
1500
Tekninen dokumentti
Tekniset tiedot
Merkki
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
34 A
Maximum Drain Source Voltage
40 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
15 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.4V
Maximum Power Dissipation
24 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Maximum Operating Temperature
+175 °C
Transistor Material
Si
Length
6.1mm
Typical Gate Charge @ Vgs
23 nC @ 10 V
Width
5.1mm
Number of Elements per Chip
2
Height
1.05mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Malaysia
Tuotetiedot