Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Height
1.1mm
Tuotetiedot
Dual P-Channel MOSFET, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,364
kpl (toimitus teipissä) (ilman ALV)
€ 0,457
kpl (toimitus teipissä) (Sis ALV:n)
Standardi
25
€ 0,364
kpl (toimitus teipissä) (ilman ALV)
€ 0,457
kpl (toimitus teipissä) (Sis ALV:n)
Standardi
25
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
P
Maximum Continuous Drain Current
4.1 A
Maximum Drain Source Voltage
20 V
Package Type
ChipFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
170 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Maximum Operating Temperature
+150 °C
Length
3.1mm
Typical Gate Charge @ Vgs
7.6 nC @ 4.5 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Height
1.1mm
Tuotetiedot