Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
240 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.82mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Alkuperämaa
China
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 5,90
1 kpl (30 kpl/putki) (ilman ALV)
€ 7,316
1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 5,90
1 kpl (30 kpl/putki) (ilman ALV)
€ 7,316
1 kpl (30 kpl/putki) (Sis ALV:n)
30
Osta irtotavarana
Määrä | Yksikköhinta | Per Putki |
---|---|---|
30 - 90 | € 5,90 | € 177,00 |
120 - 240 | € 5,20 | € 156,00 |
270 - 480 | € 5,00 | € 150,00 |
510 - 990 | € 4,90 | € 147,00 |
1020+ | € 4,75 | € 142,50 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
30 A
Maximum Drain Source Voltage
650 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
110 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
240 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Width
4.82mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
15.87mm
Typical Gate Charge @ Vgs
58 nC @ 10 V
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Alkuperämaa
China