Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
123 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
6.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Malaysia
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 1,50
1 kpl (1500 kpl/kela) (ilman ALV)
€ 1,86
1 kpl (1500 kpl/kela) (Sis ALV:n)
1500
€ 1,50
1 kpl (1500 kpl/kela) (ilman ALV)
€ 1,86
1 kpl (1500 kpl/kela) (Sis ALV:n)
1500
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
123 A
Maximum Drain Source Voltage
80 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Length
5.1mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
6.1mm
Number of Elements per Chip
1
Forward Diode Voltage
1.2V
Height
1.05mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
Malaysia