Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Series
NVTFS6H850N
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Automotive Standard
AEC-Q101
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
€ 19,48
€ 0,779 1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 24,45
€ 0,978 1 kpl (25 kpl/pakkaus) (Sis ALV:n)
Standardi
25
€ 19,48
€ 0,779 1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 24,45
€ 0,978 1 kpl (25 kpl/pakkaus) (Sis ALV:n)
Standardi
25
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
25 - 75 | € 0,779 | € 19,48 |
100 - 225 | € 0,672 | € 16,80 |
250+ | € 0,582 | € 14,55 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Series
NVTFS6H850N
Package Type
WDFN
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
3.15mm
Number of Elements per Chip
1
Length
3.15mm
Typical Gate Charge @ Vgs
19 nC @ 10 V
Maximum Operating Temperature
+175 °C
Automotive Standard
AEC-Q101
Height
0.75mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V