Tekninen dokumentti
Tekniset tiedot
Merkki
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
1 to 3mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SMini3 F2 B
Pin Count
3
Dimensions
2 x 1.25 x 0.8mm
Height
0.8mm
Width
1.25mm
Maximum Operating Temperature
+150 °C
Length
2mm
Alkuperämaa
China
Tuotetiedot
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,059
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,073
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 0,059
1 kpl (3000 kpl/kela) (ilman ALV)
€ 0,073
1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
Tekninen dokumentti
Tekniset tiedot
Merkki
PanasonicChannel Type
N
Idss Drain-Source Cut-off Current
1 to 3mA
Maximum Drain Gate Voltage
-55V
Transistor Configuration
Single
Configuration
Single
Mounting Type
Surface Mount
Package Type
SMini3 F2 B
Pin Count
3
Dimensions
2 x 1.25 x 0.8mm
Height
0.8mm
Width
1.25mm
Maximum Operating Temperature
+150 °C
Length
2mm
Alkuperämaa
China
Tuotetiedot
N-channel JFET, Panasonic
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.