Tekninen dokumentti
Tekniset tiedot
Merkki
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Height
2.3mm
Forward Diode Voltage
1V
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,349
1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 0,433
1 kpl (25 kpl/pakkaus) (Sis ALV:n)
25
€ 0,349
1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 0,433
1 kpl (25 kpl/pakkaus) (Sis ALV:n)
25
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
25 - 50 | € 0,349 | € 8,72 |
75 - 125 | € 0,302 | € 7,55 |
150 - 475 | € 0,264 | € 6,60 |
500+ | € 0,239 | € 5,98 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
55 A
Maximum Drain Source Voltage
30 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
13 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
40 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Width
5.8mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.5mm
Typical Gate Charge @ Vgs
7.5 nC @ 4.5 V
Height
2.3mm
Forward Diode Voltage
1V