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Tekniset tiedot
Merkki
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Package Type
ITO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
38.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
20 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10mm
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.5V
Height
15mm
Minimum Operating Temperature
-55 °C
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 3,55
1 kpl (1000 kpl/kela) (ilman ALV)
€ 4,455
1 kpl (1000 kpl/kela) (Sis ALV:n)
1000
€ 3,55
1 kpl (1000 kpl/kela) (ilman ALV)
€ 4,455
1 kpl (1000 kpl/kela) (Sis ALV:n)
1000
Tekninen dokumentti
Tekniset tiedot
Merkki
Taiwan SemiconductorChannel Type
N
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
800 V
Package Type
ITO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
3 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
38.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Typical Gate Charge @ Vgs
20 nC @ 10 V
Maximum Operating Temperature
+150 °C
Length
10mm
Width
4.6mm
Number of Elements per Chip
1
Forward Diode Voltage
1.5V
Height
15mm
Minimum Operating Temperature
-55 °C