Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.4mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Alkuperämaa
Philippines
Tuotetiedot
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,519
1 kpl (2500 kpl/kela) (ilman ALV)
€ 0,644
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
€ 0,519
1 kpl (2500 kpl/kela) (ilman ALV)
€ 0,644
1 kpl (2500 kpl/kela) (Sis ALV:n)
2500
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
79 A
Maximum Drain Source Voltage
25 V
Package Type
SON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.4 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.4V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-12 V, +16 V
Width
3.4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.4mm
Typical Gate Charge @ Vgs
5.8 nC @ 4.5 V
Height
1.1mm
Series
NexFET
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1V
Alkuperämaa
Philippines
Tuotetiedot