Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
73 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
4 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Tuotetiedot
N-Channel NexFET™ Power MOSFET, Texas Instruments
MOSFET Transistors, Texas Instruments
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,653
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,82
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 0,653
1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 0,82
1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
Tekninen dokumentti
Tekniset tiedot
Merkki
Texas InstrumentsChannel Type
N
Maximum Continuous Drain Current
73 A
Maximum Drain Source Voltage
30 V
Series
NexFET
Package Type
VSONP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17.3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Minimum Gate Threshold Voltage
0.9V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5.8mm
Typical Gate Charge @ Vgs
4 nC @ 4.5 V
Width
5mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1.1mm
Tuotetiedot