Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-23
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Series
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Tuotetiedot
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
€ 8,80
€ 0,044 1 kpl (200 kpl/pakkaus) (ilman ALV)
€ 11,04
€ 0,055 1 kpl (200 kpl/pakkaus) (Sis ALV:n)
Standardi
200
€ 8,80
€ 0,044 1 kpl (200 kpl/pakkaus) (ilman ALV)
€ 11,04
€ 0,055 1 kpl (200 kpl/pakkaus) (Sis ALV:n)
Standardi
200
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
200 - 800 | € 0,044 | € 8,80 |
1000 - 1800 | € 0,026 | € 5,20 |
2000 - 4800 | € 0,024 | € 4,80 |
5000 - 9800 | € 0,02 | € 4,00 |
10000+ | € 0,02 | € 4,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-23
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
30V
Diode Configuration
Series
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
800mV
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Tuotetiedot
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.