Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.25mm
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
China
€ 5,80
€ 0,058 kpl (toimitus kelassa) (ilman ALV)
€ 7,28
€ 0,073 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
100
€ 5,80
€ 0,058 kpl (toimitus kelassa) (ilman ALV)
€ 7,28
€ 0,073 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
100
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Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
600 mA
Maximum Drain Source Voltage
20 V
Package Type
X1-DFN1212
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.5V
Maximum Power Dissipation
800 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±8 V
Length
1.25mm
Typical Gate Charge @ Vgs
0.8 nC @ 8V
Maximum Operating Temperature
+150 °C
Number of Elements per Chip
1
Width
1.25mm
Height
0.48mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
China