Tekninen dokumentti
Tekniset tiedot
Merkki
International RectifierChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
540 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Series
HEXFET
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Height
1.02mm
Width
1.4mm
Hintaa ei saatavilla
1
Hintaa ei saatavilla
1
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Tekninen dokumentti
Tekniset tiedot
Merkki
International RectifierChannel Type
N
Maximum Continuous Drain Current
1.2 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
400 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
540 mW
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Series
HEXFET
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Typical Gate Charge @ Vgs
3.3 nC @ 10 V
Height
1.02mm
Width
1.4mm