Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
115 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.9 x 4.5 x 15.7mm
Tuotetiedot
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
€ 25,00
€ 1,00 kpl (toimitus putkessa) (ilman ALV)
€ 31,38
€ 1,255 kpl (toimitus putkessa) (Sis ALV:n)
Tuotantopakkaus (Putki)
25
€ 25,00
€ 1,00 kpl (toimitus putkessa) (ilman ALV)
€ 31,38
€ 1,255 kpl (toimitus putkessa) (Sis ALV:n)
Tuotantopakkaus (Putki)
25
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Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiTransistor Type
NPN
Maximum DC Collector Current
2 A
Maximum Collector Emitter Voltage
115 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
30 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
9.9 x 4.5 x 15.7mm
Tuotetiedot
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.