Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Series
MDmesh
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.75mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
10.4mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Tuotetiedot
N-Channel MDmesh™, 600V/650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 37,50
€ 3,75 kpl (toimitus kelassa) (ilman ALV)
€ 47,06
€ 4,71 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
10
€ 37,50
€ 3,75 kpl (toimitus kelassa) (ilman ALV)
€ 47,06
€ 4,71 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
10
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta |
---|---|
10 - 99 | € 3,75 |
100 - 499 | € 3,35 |
500 - 999 | € 2,95 |
1000+ | € 2,55 |
Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
17 A
Maximum Drain Source Voltage
650 V
Package Type
D2PAK (TO-263)
Series
MDmesh
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
190 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
125 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Length
10.75mm
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Typical Gate Charge @ Vgs
46 nC @ 10 V
Width
10.4mm
Minimum Operating Temperature
-55 °C
Height
4.6mm
Tuotetiedot