Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
30 V
Series
TPC
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +20 V
Width
3.9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.52mm
Tuotetiedot
MOSFET P-Channel, TPC Series, Toshiba
MOSFET Transistors, Toshiba
€ 3,44
€ 0,688 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 4,32
€ 0,863 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
€ 3,44
€ 0,688 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 4,32
€ 0,863 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 45 | € 0,688 | € 3,44 |
50 - 495 | € 0,651 | € 3,26 |
500 - 2495 | € 0,619 | € 3,10 |
2500 - 4995 | € 0,552 | € 2,76 |
5000+ | € 0,518 | € 2,59 |
Tekninen dokumentti
Tekniset tiedot
Merkki
ToshibaChannel Type
P
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
30 V
Series
TPC
Package Type
SOP
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
1.9 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +20 V
Width
3.9mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.9mm
Typical Gate Charge @ Vgs
64 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.52mm
Tuotetiedot