Vishay N-Channel MOSFET, 1.4 A, 1000 V, 3-Pin TO-220AB IRFBG20PBF

Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 1,70
€ 1,70 kpl (ilman ALV)
€ 2,13
€ 2,13 kpl (Sis ALV:n)
Standardi
1
€ 1,70
€ 1,70 kpl (ilman ALV)
€ 2,13
€ 2,13 kpl (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
1
Varastotiedot eivät ole tilapäisesti saatavilla.
Määrä | Yksikköhinta |
---|---|
1 - 9 | € 1,70 |
10 - 49 | € 1,45 |
50 - 99 | € 1,35 |
100 - 249 | € 1,30 |
250+ | € 1,20 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
1.4 A
Maximum Drain Source Voltage
1000 V
Package Type
TO-220AB
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
54 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
4.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
9.01mm
Minimum Operating Temperature
-55 °C
Tuotetiedot