Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-363 (SC-88)
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Series
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
6
Maximum Forward Voltage Drop
380mV
Number of Elements per Chip
4
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Tuotetiedot
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.
Diodes and Rectifiers, Diodes Inc
€ 13,90
€ 0,139 kpl (toimitus kelassa) (ilman ALV)
€ 17,44
€ 0,174 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
100
€ 13,90
€ 0,139 kpl (toimitus kelassa) (ilman ALV)
€ 17,44
€ 0,174 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
100
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta | Per Kela |
---|---|---|
100 - 140 | € 0,139 | € 1,39 |
150 - 740 | € 0,123 | € 1,23 |
750 - 1490 | € 0,112 | € 1,12 |
1500+ | € 0,098 | € 0,98 |
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexMounting Type
Surface Mount
Package Type
SOT-363 (SC-88)
Maximum Continuous Forward Current
200mA
Peak Reverse Repetitive Voltage
40V
Diode Configuration
Series
Rectifier Type
Schottky Diode
Diode Type
Schottky
Pin Count
6
Maximum Forward Voltage Drop
380mV
Number of Elements per Chip
4
Diode Technology
Schottky Barrier
Peak Reverse Recovery Time
5ns
Peak Non-Repetitive Forward Surge Current
600mA
Tuotetiedot
Schottky Barrier Diodes, up to 250mA, Diodes Inc
Super Barrier Rectifiers (SBR) diodes are the next generation of rectifiers. The two terminal device has a lower forward voltage (VF) than comparable Schottky diodes while possessing the thermal stability and high reliability characteristics of PN epitaxial diodes.