onsemi QFET N-Channel MOSFET, 140 A, 100 V, 3-Pin TO-3PN FQA140N10
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
140 A
Maximum Drain Source Voltage
100 V
Series
QFET
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
220 nC @ 10 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.8mm
Maximum Operating Temperature
+175 °C
Height
18.9mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 7,20
€ 7,20 kpl (ilman ALV)
€ 9,04
€ 9,04 kpl (Sis ALV:n)
Standardi
1
€ 7,20
€ 7,20 kpl (ilman ALV)
€ 9,04
€ 9,04 kpl (Sis ALV:n)
Standardi
1
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| Määrä | Yksikköhinta |
|---|---|
| 1 - 9 | € 7,20 |
| 10+ | € 6,20 |
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
- Lataa ja käytä DesignSpark-ohjelmistoamme piirilevyjen ja 3D-mekaniikan suunnitteluun.
- Selaa ja osallistu nettisivujen sisältöön ja keskusteluihin.
- Lataa 3D-malleja, piirustuksia ja pohjakuvia yli miljoonasta tuotteesta.
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
140 A
Maximum Drain Source Voltage
100 V
Series
QFET
Package Type
TO-3PN
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
375 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-25 V, +25 V
Typical Gate Charge @ Vgs
220 nC @ 10 V
Width
5mm
Transistor Material
Si
Number of Elements per Chip
1
Length
15.8mm
Maximum Operating Temperature
+175 °C
Height
18.9mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
QFET® N-Channel MOSFET, over 31A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideoi. Luo. Tee yhteistyötä
LIITY ILMAISEKSI
Ei piilokuluja!
- Lataa ja käytä DesignSpark-ohjelmistoamme piirilevyjen ja 3D-mekaniikan suunnitteluun.
- Selaa ja osallistu nettisivujen sisältöön ja keskusteluihin.
- Lataa 3D-malleja, piirustuksia ja pohjakuvia yli miljoonasta tuotteesta.