Tekninen dokumentti
Tekniset tiedot
Merkki
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
16A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
3.93V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
135ns
Peak Non-Repetitive Forward Surge Current
190A
Tuotetiedot
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 9,50
€ 9,50 kpl (ilman ALV)
€ 11,92
€ 11,92 kpl (Sis ALV:n)
Standardi
1
€ 9,50
€ 9,50 kpl (ilman ALV)
€ 11,92
€ 11,92 kpl (Sis ALV:n)
Standardi
1
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Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta |
---|---|
1 - 9 | € 9,50 |
10 - 24 | € 8,10 |
25 - 49 | € 7,30 |
50 - 99 | € 6,70 |
100+ | € 6,20 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
16A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Single
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
2
Maximum Forward Voltage Drop
3.93V
Number of Elements per Chip
1
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
135ns
Peak Non-Repetitive Forward Surge Current
190A
Tuotetiedot
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.