Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 72,50
€ 1,45 1 kpl (50 kpl/putki) (ilman ALV)
€ 90,99
€ 1,82 1 kpl (50 kpl/putki) (Sis ALV:n)
50
€ 72,50
€ 1,45 1 kpl (50 kpl/putki) (ilman ALV)
€ 90,99
€ 1,82 1 kpl (50 kpl/putki) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
50
Varastotiedot eivät ole tilapäisesti saatavilla.
Määrä | Yksikköhinta | Per Putki |
---|---|---|
50 - 50 | € 1,45 | € 72,50 |
100 - 450 | € 1,15 | € 57,50 |
500 - 950 | € 0,947 | € 47,35 |
1000 - 4950 | € 0,795 | € 39,75 |
5000+ | € 0,747 | € 37,35 |
Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
9 A
Maximum Drain Source Voltage
400 V
Package Type
TO-220FP
Series
MDmesh, SuperMESH
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
32 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Height
16.4mm
Minimum Operating Temperature
-55 °C
Tuotetiedot