Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
13.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 4,14
€ 0,827 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 5,19
€ 1,038 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
€ 4,14
€ 0,827 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 5,19
€ 1,038 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 45 | € 0,827 | € 4,14 |
50 - 245 | € 0,779 | € 3,90 |
250 - 495 | € 0,704 | € 3,52 |
500 - 1245 | € 0,662 | € 3,31 |
1250+ | € 0,622 | € 3,11 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
13.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
8 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
20 nC @ 10 V, 8.8 nC @ 4.5 V
Width
4mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot