Tekninen dokumentti
Tekniset tiedot
Merkki
VishayMounting Type
Panel Mount
Package Type
SOT-227
Maximum Continuous Forward Current
120A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Isolated
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
4
Maximum Forward Voltage Drop
5.3V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
218ns
Peak Non-Repetitive Forward Surge Current
350A
Alkuperämaa
Philippines
Tuotetiedot
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 114,00
€ 57,00 kpl (toimitus laatikossa) (ilman ALV)
€ 143,07
€ 71,54 kpl (toimitus laatikossa) (Sis ALV:n)
Tuotantopakkaus (Laatikko)
2
€ 114,00
€ 57,00 kpl (toimitus laatikossa) (ilman ALV)
€ 143,07
€ 71,54 kpl (toimitus laatikossa) (Sis ALV:n)
Tuotantopakkaus (Laatikko)
2
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta |
---|---|
2 - 4 | € 57,00 |
5 - 9 | € 54,00 |
10+ | € 51,00 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayMounting Type
Panel Mount
Package Type
SOT-227
Maximum Continuous Forward Current
120A
Peak Reverse Repetitive Voltage
1200V
Diode Configuration
Isolated
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
4
Maximum Forward Voltage Drop
5.3V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
218ns
Peak Non-Repetitive Forward Surge Current
350A
Alkuperämaa
Philippines
Tuotetiedot
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.