Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
17 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.4 nC @ 5 V
Width
1.3mm
Transistor Material
Si
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Height
1mm
Alkuperämaa
China
€ 4,85
€ 0,485 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 6,09
€ 0,609 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 4,85
€ 0,485 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 6,09
€ 0,609 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
10
Varastotiedot eivät ole tilapäisesti saatavilla.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 40 | € 0,485 | € 4,85 |
50 - 90 | € 0,313 | € 3,13 |
100+ | € 0,304 | € 3,04 |
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
17 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.4 nC @ 5 V
Width
1.3mm
Transistor Material
Si
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Height
1mm
Alkuperämaa
China