Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.1mm
Typical Gate Charge @ Vgs
20 nC @ 10 V, 9 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
1.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
Malaysia
Tuotetiedot
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
€ 7,76
€ 0,776 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 9,74
€ 0,974 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 7,76
€ 0,776 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 9,74
€ 0,974 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 90 | € 0,776 | € 7,76 |
100 - 240 | € 0,67 | € 6,70 |
250 - 490 | € 0,58 | € 5,80 |
500 - 990 | € 0,51 | € 5,10 |
1000+ | € 0,464 | € 4,64 |
Tekninen dokumentti
Tekniset tiedot
Merkki
onsemiChannel Type
N
Maximum Continuous Drain Current
71 A
Maximum Drain Source Voltage
60 V
Package Type
DFN
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
8.8 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.1mm
Transistor Material
Si
Number of Elements per Chip
1
Length
5.1mm
Typical Gate Charge @ Vgs
20 nC @ 10 V, 9 nC @ 4.5 V
Maximum Operating Temperature
+175 °C
Height
1.95mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Alkuperämaa
Malaysia
Tuotetiedot