Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
2.6 nC @ 5 V, 4.6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Hintaa ei saatavilla
1 kpl (20 kpl/pakkaus) (ilman ALV)
Standardi
20
Hintaa ei saatavilla
1 kpl (20 kpl/pakkaus) (ilman ALV)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
20
Varastotiedot eivät ole tilapäisesti saatavilla.
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
2.6 nC @ 5 V, 4.6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China