Tekninen dokumentti
Tekniset tiedot
Merkki
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Alkuperämaa
China
Tuotetiedot
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
€ 1,23
€ 0,123 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 1,54
€ 0,154 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 1,23
€ 0,123 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 1,54
€ 0,154 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
10
Varastotiedot eivät ole tilapäisesti saatavilla.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 40 | € 0,123 | € 1,23 |
50 - 90 | € 0,112 | € 1,12 |
100 - 240 | € 0,105 | € 1,05 |
250 - 490 | € 0,10 | € 1,00 |
500+ | € 0,086 | € 0,86 |
Tekninen dokumentti
Tekniset tiedot
Merkki
NXPChannel Type
N
Idss Drain-Source Cut-off Current
12 to 60mA
Maximum Drain Source Voltage
25 V
Maximum Gate Source Voltage
-25 V
Maximum Drain Gate Voltage
-25V
Transistor Configuration
Single
Configuration
Single
Maximum Drain Source Resistance
50 Ω
Mounting Type
Surface Mount
Package Type
SOT-23 (TO-236AB)
Pin Count
3
Dimensions
3 x 1.4 x 1mm
Minimum Operating Temperature
-65 °C
Height
1mm
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Alkuperämaa
China
Tuotetiedot
N-channel JFET, NXP
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.