Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.95V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.05mm
Typical Gate Charge @ Vgs
1.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.35mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 7,10
€ 0,142 1 kpl (50 kpl/pakkaus) (ilman ALV)
€ 8,91
€ 0,178 1 kpl (50 kpl/pakkaus) (Sis ALV:n)
Standardi
50
€ 7,10
€ 0,142 1 kpl (50 kpl/pakkaus) (ilman ALV)
€ 8,91
€ 0,178 1 kpl (50 kpl/pakkaus) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
50
Varastotiedot eivät ole tilapäisesti saatavilla.
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Voltage
20 V
Package Type
X2-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.95V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
0.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
1.05mm
Typical Gate Charge @ Vgs
1.6 nC @ 4.5 V
Maximum Operating Temperature
+150 °C
Height
0.35mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Tuotetiedot