Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.26mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
P-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
€ 9,90
€ 0,396 1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 12,42
€ 0,497 1 kpl (25 kpl/pakkaus) (Sis ALV:n)
Standardi
25
€ 9,90
€ 0,396 1 kpl (25 kpl/pakkaus) (ilman ALV)
€ 12,42
€ 0,497 1 kpl (25 kpl/pakkaus) (Sis ALV:n)
Standardi
25
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Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
8.6 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
45 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.2mm
Transistor Material
Si
Number of Elements per Chip
1
Length
6.7mm
Typical Gate Charge @ Vgs
33.7 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
2.26mm
Minimum Operating Temperature
-55 °C
Tuotetiedot