Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
OptiMOS™ -T2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
17.2 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
6.22mm
Transistor Material
Si
Length
6.5mm
Number of Elements per Chip
1
Height
2.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Tuotetiedot
Infineon OptiMOS™ T2 Power MOSFETs
Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 15,98
€ 0,639 kpl (toimitus teipissä) (ilman ALV)
€ 20,05
€ 0,802 kpl (toimitus teipissä) (Sis ALV:n)
Standardi
25
€ 15,98
€ 0,639 kpl (toimitus teipissä) (ilman ALV)
€ 20,05
€ 0,802 kpl (toimitus teipissä) (Sis ALV:n)
Varastotiedot eivät ole tilapäisesti saatavilla.
Standardi
25
Varastotiedot eivät ole tilapäisesti saatavilla.
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
50 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
OptiMOS™ -T2
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.9 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
17.2 nC @ 10 V
Maximum Operating Temperature
+175 °C
Width
6.22mm
Transistor Material
Si
Length
6.5mm
Number of Elements per Chip
1
Height
2.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Tuotetiedot
Infineon OptiMOS™ T2 Power MOSFETs
Infineons new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™.
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.