Tekninen dokumentti
Tekniset tiedot
Merkki
IXYSChannel Type
N
Maximum Continuous Drain Current
54 A
Maximum Drain Source Voltage
650 V
Package Type
ISOPLUS247
Series
X2-Class
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
152 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
21.34mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
5.21mm
Alkuperämaa
United States
Tuotetiedot
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
€ 483,00
€ 16,10 1 kpl (30 kpl/putki) (ilman ALV)
€ 606,16
€ 20,206 1 kpl (30 kpl/putki) (Sis ALV:n)
30
€ 483,00
€ 16,10 1 kpl (30 kpl/putki) (ilman ALV)
€ 606,16
€ 20,206 1 kpl (30 kpl/putki) (Sis ALV:n)
30
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Tekninen dokumentti
Tekniset tiedot
Merkki
IXYSChannel Type
N
Maximum Continuous Drain Current
54 A
Maximum Drain Source Voltage
650 V
Package Type
ISOPLUS247
Series
X2-Class
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
33 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
330 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
16.13mm
Typical Gate Charge @ Vgs
152 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Width
21.34mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.4V
Height
5.21mm
Alkuperämaa
United States
Tuotetiedot
N-channel Power MOSFET, IXYS X2-Class Series
The IXYS X2 class Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS