Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
50 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.3mm
Tuotetiedot
N-Channel MDmesh™ SuperMESH™, 250V to 650V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
€ 17,75
€ 3,55 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 22,28
€ 4,455 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
€ 17,75
€ 3,55 1 kpl (5 kpl/pakkaus) (ilman ALV)
€ 22,28
€ 4,455 1 kpl (5 kpl/pakkaus) (Sis ALV:n)
Standardi
5
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
5 - 5 | € 3,55 | € 17,75 |
10 - 95 | € 3,00 | € 15,00 |
100 - 495 | € 2,35 | € 11,75 |
500 - 995 | € 2,00 | € 10,00 |
1000+ | € 1,65 | € 8,25 |
Tekninen dokumentti
Tekniset tiedot
Merkki
STMicroelectronicsChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
600 V
Series
MDmesh, SuperMESH
Package Type
TO-220FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
35 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
50 nC @ 10 V
Width
4.6mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.4mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
9.3mm
Tuotetiedot