Tekninen dokumentti
Tekniset tiedot
Merkki
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Alkuperämaa
Taiwan, Province Of China
€ 14,50
€ 1,45 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 18,20
€ 1,82 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
€ 14,50
€ 1,45 1 kpl (10 kpl/pakkaus) (ilman ALV)
€ 18,20
€ 1,82 1 kpl (10 kpl/pakkaus) (Sis ALV:n)
Standardi
10
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
10 - 90 | € 1,45 | € 14,50 |
100 - 490 | € 1,25 | € 12,50 |
500 - 990 | € 1,10 | € 11,00 |
1000+ | € 0,955 | € 9,55 |
Tekninen dokumentti
Tekniset tiedot
Merkki
Vishay SiliconixChannel Type
P
Maximum Continuous Drain Current
100 A
Maximum Drain Source Voltage
40 V
Series
TrenchFET
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
10 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.5V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Number of Elements per Chip
1
Width
2.38mm
Length
6.73mm
Typical Gate Charge @ Vgs
185 nC @ 10 V
Transistor Material
Si
Maximum Operating Temperature
+175 °C
Height
6.22mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Alkuperämaa
Taiwan, Province Of China