Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
2.6 nC @ 5 V, 4.6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China
Hintaa ei saatavilla
kpl (toimitus kelassa) (ilman ALV)
Tuotantopakkaus (Kela)
20
Hintaa ei saatavilla
kpl (toimitus kelassa) (ilman ALV)
Tuotantopakkaus (Kela)
20
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
70 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
750 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
2.6 nC @ 5 V, 4.6 nC @ 10 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3.04mm
Width
1.4mm
Height
1.02mm
Minimum Operating Temperature
-55 °C
Alkuperämaa
China