Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.1 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Height
1.12mm
Minimum Operating Temperature
-55 °C
Tuotetiedot
N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 29,00
€ 1,45 kpl (toimitus kelassa) (ilman ALV)
€ 36,40
€ 1,82 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
20
€ 29,00
€ 1,45 kpl (toimitus kelassa) (ilman ALV)
€ 36,40
€ 1,82 kpl (toimitus kelassa) (Sis ALV:n)
Tuotantopakkaus (Kela)
20
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta | Per Kela |
---|---|---|
20 - 98 | € 1,45 | € 2,90 |
100 - 198 | € 1,30 | € 2,60 |
200 - 498 | € 1,20 | € 2,40 |
500+ | € 1,15 | € 2,30 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N
Maximum Continuous Drain Current
40 A
Maximum Drain Source Voltage
30 V
Series
TrenchFET
Package Type
PowerPAK 1212-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
3.1 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
52 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-16 V, +20 V
Width
3.15mm
Length
3.15mm
Typical Gate Charge @ Vgs
51 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
1
Height
1.12mm
Minimum Operating Temperature
-55 °C
Tuotetiedot