Tekninen dokumentti
Tekniset tiedot
Merkki
ams OSRAMSpectrums Detected
Infrared
Maximum Light Current
80µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
±60 °
Polarity
NPN
Number of Pins
2
Mounting Type
Surface Mount
Package Type
Chip LED
Dimensions
2.1 x 0.95 x 1.35mm
Collector Current
20mA
Spectral Range of Sensitivity
470 → 670 nm
Minimum Wavelength Detected
470nm
Maximum Wavelength Detected
670nm
Length
2.1mm
Width
0.95mm
Height
1.35mm
Alkuperämaa
Malaysia
Tuotetiedot
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.
Ambient Light Sensors, OSRAM Opto Semiconductors
€ 1 017,00
€ 0,339 1 kpl (3000 kpl/kela) (ilman ALV)
€ 1 276,34
€ 0,425 1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
€ 1 017,00
€ 0,339 1 kpl (3000 kpl/kela) (ilman ALV)
€ 1 276,34
€ 0,425 1 kpl (3000 kpl/kela) (Sis ALV:n)
3000
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Tekninen dokumentti
Tekniset tiedot
Merkki
ams OSRAMSpectrums Detected
Infrared
Maximum Light Current
80µA
Maximum Dark Current
3nA
Angle of Half Sensitivity
±60 °
Polarity
NPN
Number of Pins
2
Mounting Type
Surface Mount
Package Type
Chip LED
Dimensions
2.1 x 0.95 x 1.35mm
Collector Current
20mA
Spectral Range of Sensitivity
470 → 670 nm
Minimum Wavelength Detected
470nm
Maximum Wavelength Detected
670nm
Length
2.1mm
Width
0.95mm
Height
1.35mm
Alkuperämaa
Malaysia
Tuotetiedot
Ambient Light Sensors - Vlambda
A range of NPN silicon phototransistors from OSRAM Opto Semiconductors, with improved V lambda characteristics. These compact phototransistors are suitable for a wide range of applications including; ambient light detectors, exposure meters for both daylight and artificial light, sensor for backlight dimming and for control and drive circuits.