Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
2.1 A, 5.2 A
Maximum Drain Source Voltage
20 V
Package Type
TSOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
56 mΩ, 168 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
12 nC @ 10 V, 14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
1.65mm
Length
2.95mm
Minimum Operating Temperature
-55 °C
Height
0.9mm
Country of Origin
China
Product details
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
€ 70.80
€ 0.118 Each (Supplied on a Reel) (Exc. Vat)
€ 88.85
€ 0.148 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
600
€ 70.80
€ 0.118 Each (Supplied on a Reel) (Exc. Vat)
€ 88.85
€ 0.148 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
600
Stock information temporarily unavailable.
Please check again later.
Quantity | Unit price | Per Reel |
---|---|---|
600 - 1450 | € 0.118 | € 5.90 |
1500+ | € 0.087 | € 4.35 |
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
2.1 A, 5.2 A
Maximum Drain Source Voltage
20 V
Package Type
TSOT-26
Mounting Type
Surface Mount
Pin Count
6
Maximum Drain Source Resistance
56 mΩ, 168 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
12 nC @ 10 V, 14 nC @ 10 V
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Number of Elements per Chip
2
Width
1.65mm
Length
2.95mm
Minimum Operating Temperature
-55 °C
Height
0.9mm
Country of Origin
China
Product details