Tekninen dokumentti
Tekniset tiedot
Merkki
VishayMounting Type
Through Hole
Package Type
TO-220F
Maximum Continuous Forward Current
60A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Common Cathode
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
790mV
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
320A
Alkuperämaa
China
Tuotetiedot
TMBS - Trench MOS Barrier Schottky Rectifiers, 30A to 80A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.
Schottky Rectifiers, Vishay Semiconductor
€ 2,65
€ 2,65 kpl (ilman ALV)
€ 3,33
€ 3,33 kpl (Sis ALV:n)
Standardi
1
€ 2,65
€ 2,65 kpl (ilman ALV)
€ 3,33
€ 3,33 kpl (Sis ALV:n)
Standardi
1
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Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta |
---|---|
1 - 9 | € 2,65 |
10 - 49 | € 2,35 |
50 - 99 | € 2,25 |
100 - 249 | € 2,10 |
250+ | € 2,05 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayMounting Type
Through Hole
Package Type
TO-220F
Maximum Continuous Forward Current
60A
Peak Reverse Repetitive Voltage
100V
Diode Configuration
Common Cathode
Rectifier Type
Schottky Rectifier
Diode Type
Schottky
Pin Count
3
Maximum Forward Voltage Drop
790mV
Number of Elements per Chip
2
Diode Technology
Schottky Barrier
Peak Non-Repetitive Forward Surge Current
320A
Alkuperämaa
China
Tuotetiedot
TMBS - Trench MOS Barrier Schottky Rectifiers, 30A to 80A, Vishay Semiconductor
The Trench MOS Barrier Schottky (TMBS) Rectifier Series by Vishay contain a patented trench structure. TMBS rectifiers offer several advantages over planar Schottky rectifiers. At operating voltages of 45V and above planar Schottky rectifiers can lose their advantage of fast switching speeds and low forward drop to a significant degree. The patented TMBS structure addresses these issues by diminishing minority carrier injections to the drift region, therefore minimising stored charges and improving switching speeds.