Tekninen dokumentti
Tekniset tiedot
Merkki
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
50A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
3
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
75ns
Peak Non-Repetitive Forward Surge Current
225A
Tuotetiedot
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.
Diodes and Rectifiers, Vishay Semiconductor
€ 10,90
€ 10,90 kpl (ilman ALV)
€ 13,68
€ 13,68 kpl (Sis ALV:n)
1
€ 10,90
€ 10,90 kpl (ilman ALV)
€ 13,68
€ 13,68 kpl (Sis ALV:n)
1
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Tarkista myöhemmin uudelleen.
Määrä | Yksikköhinta |
---|---|
1 - 9 | € 10,90 |
10 - 24 | € 10,40 |
25 - 49 | € 9,80 |
50 - 99 | € 9,30 |
100+ | € 8,70 |
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayMounting Type
Through Hole
Package Type
TO-247AC
Maximum Continuous Forward Current
50A
Peak Reverse Repetitive Voltage
600V
Diode Configuration
Common Cathode
Rectifier Type
Recovery Rectifier
Diode Type
Rectifier
Pin Count
3
Maximum Forward Voltage Drop
2V
Number of Elements per Chip
2
Diode Technology
Silicon Junction
Peak Reverse Recovery Time
75ns
Peak Non-Repetitive Forward Surge Current
225A
Tuotetiedot
HEXFRED® Ultrafast Recovery Rectifiers, Vishay Semiconductor
The HEXFRED® range of products from Vishay are ultrafast recovery rectifiers that contain ultrafast planar technology with a proprietary Schottky barrier based inner structure that enables soft and fast recovery behaviour at any diF/dt condition. These characteristics mean that HEXFRED® products are well suited for use as a companion diode for IGBTs and MOSFETs.