Semikron Bridge Rectifier, 30A, 1200V, 4-Pin
Tekninen dokumentti
Tekniset tiedot
Merkki
SemikronPeak Average Forward Current
30A
Bridge Type
Single Phase
Peak Reverse Repetitive Voltage
1200V
Mounting Type
Chassis Mount
Package Type
G 12
Pin Count
4
Configuration
Single
Peak Non-Repetitive Forward Surge Current
370A
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Peak Forward Voltage
2.2V
Peak Reverse Current
5mA
Length
55mm
Dimensions
55 x 45 x 24mm
Height
24mm
Width
45mm
Tuotetiedot
MOSFETs - N-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.
Hintaa ei saatavilla
1
Hintaa ei saatavilla
Varastotiedot eivät ole tilapäisesti saatavilla.
1
Varastotiedot eivät ole tilapäisesti saatavilla.
Tekninen dokumentti
Tekniset tiedot
Merkki
SemikronPeak Average Forward Current
30A
Bridge Type
Single Phase
Peak Reverse Repetitive Voltage
1200V
Mounting Type
Chassis Mount
Package Type
G 12
Pin Count
4
Configuration
Single
Peak Non-Repetitive Forward Surge Current
370A
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-40 °C
Peak Forward Voltage
2.2V
Peak Reverse Current
5mA
Length
55mm
Dimensions
55 x 45 x 24mm
Height
24mm
Width
45mm
Tuotetiedot
MOSFETs - N-Channel
The Metal–Oxide–Semiconductor Field-Effect Transistor or MOSFET is a transistor used for amplifying or switching electronic signals.
A voltage on the oxide-insulated Gate electrode can induce a conducting channel between the two other contacts called Source and Drain. The channel can be of N-type or P-type.