Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3

RS Stock No.: 787-9222PBrand: VishayManufacturers Part No.: SI2333DDS-T1-GE3
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Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

19 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

23 nC @ 8 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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P-Channel MOSFET Transistor, 4.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333DS-T1-E3
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€ 37.90

€ 0.379 Each (Supplied on a Reel) (Exc. Vat)

€ 47.56

€ 0.476 Each (Supplied on a Reel) (inc. VAT)

Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3
Select packaging type

€ 37.90

€ 0.379 Each (Supplied on a Reel) (Exc. Vat)

€ 47.56

€ 0.476 Each (Supplied on a Reel) (inc. VAT)

Vishay P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 SI2333DDS-T1-GE3

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

QuantityUnit pricePer Reel
100 - 490€ 0.379€ 3.79
500 - 990€ 0.344€ 3.44
1000 - 2490€ 0.323€ 3.23
2500+€ 0.303€ 3.03

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You may be interested in
P-Channel MOSFET Transistor, 3 A, 12 V, 3-Pin SOT-23 Vishay SI2315BDS-T1-E3
Price on AskingEach (Supplied on a Reel) (Exc. Vat)
P-Channel MOSFET Transistor, 4.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333DS-T1-E3
Price on AskingEach (Supplied on a Reel) (Exc. Vat)

Technical Document

Specifications

Brand

Vishay

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

19 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.7 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Length

3.04mm

Typical Gate Charge @ Vgs

23 nC @ 8 V

Maximum Operating Temperature

+150 °C

Width

1.4mm

Minimum Operating Temperature

-55 °C

Height

1.02mm

Product details

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in
P-Channel MOSFET Transistor, 3 A, 12 V, 3-Pin SOT-23 Vishay SI2315BDS-T1-E3
Price on AskingEach (Supplied on a Reel) (Exc. Vat)
P-Channel MOSFET Transistor, 4.1 A, 12 V, 3-Pin SOT-23 Vishay SI2333DS-T1-E3
Price on AskingEach (Supplied on a Reel) (Exc. Vat)