Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N, P
Maximum Continuous Drain Current
3.8 A, 6.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ, 60 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.3 W
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
11 nC @ 4.5 V, 6 nC @ 4.5 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Alkuperämaa
China
Hintaa ei saatavilla
1 kpl (5 kpl/pakkaus) (ilman ALV)
Standardi
5
Hintaa ei saatavilla
1 kpl (5 kpl/pakkaus) (ilman ALV)
Standardi
5
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
Tekninen dokumentti
Tekniset tiedot
Merkki
VishayChannel Type
N, P
Maximum Continuous Drain Current
3.8 A, 6.6 A
Maximum Drain Source Voltage
20 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ, 60 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
1.3 W
Maximum Gate Source Voltage
-12 V, +12 V
Typical Gate Charge @ Vgs
11 nC @ 4.5 V, 6 nC @ 4.5 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
4mm
Minimum Operating Temperature
-55 °C
Height
1.55mm
Alkuperämaa
China