Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
0.9 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1.1mm
Tuotetiedot
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,324
kpl (toimitus kelassa) (ilman ALV)
€ 0,402
kpl (toimitus kelassa) (Sis ALV:n)
25
€ 0,324
kpl (toimitus kelassa) (ilman ALV)
€ 0,402
kpl (toimitus kelassa) (Sis ALV:n)
25
Osta irtotavarana
Määrä | Yksikköhinta | Per Kela |
---|---|---|
25 - 125 | € 0,324 | € 8,10 |
150+ | € 0,134 | € 3,35 |
Tekninen dokumentti
Tekniset tiedot
Merkki
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
630 mA
Maximum Drain Source Voltage
20 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
0.9 nC @ 4.5 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
3mm
Width
1.4mm
Transistor Material
Si
Minimum Operating Temperature
-65 °C
Height
1.1mm
Tuotetiedot