Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
33 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Maximum Operating Temperature
+175 °C
Length
5.15mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5.9mm
Transistor Material
Si
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.75mm
Series
OptiMOS
Tuotetiedot
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Varastotiedot eivät ole tilapäisesti saatavilla.
Tarkista myöhemmin uudelleen.
€ 0,912
1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 1,131
1 kpl (20 kpl/pakkaus) (Sis ALV:n)
20
€ 0,912
1 kpl (20 kpl/pakkaus) (ilman ALV)
€ 1,131
1 kpl (20 kpl/pakkaus) (Sis ALV:n)
20
Osta irtotavarana
Määrä | Yksikköhinta | Per Pakkaus |
---|---|---|
20 - 180 | € 0,912 | € 18,24 |
200+ | € 0,697 | € 13,94 |
Tekninen dokumentti
Tekniset tiedot
Merkki
InfineonChannel Type
N
Maximum Continuous Drain Current
20 A
Maximum Drain Source Voltage
60 V
Package Type
TDSON
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
46 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
33 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-16 V, +16 V
Maximum Operating Temperature
+175 °C
Length
5.15mm
Typical Gate Charge @ Vgs
15 nC @ 10 V
Width
5.9mm
Transistor Material
Si
Number of Elements per Chip
2
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.75mm
Series
OptiMOS
Tuotetiedot
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.